900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Advanced Power Technology

MS1003 Datasheet Preview

MS1003 Datasheet

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

No Preview Available !

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
www.datasheet4u.com
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
175 MHz
12.5 VOLTS
POUT = 100 WATTS
GP = 6.0 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor
designed primarily for VHF, FM communications. Diffused
emitter resistors provide high VSWR capability under rated
operating conditions. Internal impedance matching ensures
optimum power gain and efficiency over the 136-175 MHz band.
MS1003
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VCES
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
36
18
36
4.0
20
270
+200
-65 to +150
Unit
V
V
V
V
A
W
°C
°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.65 °C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.




Advanced Power Technology

MS1003 Datasheet Preview

MS1003 Datasheet

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

No Preview Available !

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1003
www.datasheet4u.com
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVCBO
BVCES
BVCEO
BVEBO
ICES
hFE
IC = 50mA
IC = 100mA
IC = 100mA
IE = 10mA
VCE = 15V
VCE = 5V
IE = 0mA
VBE = 0V
IB = 0mA
IC = 0mA
IE = 0mA
IC = 5A
Min.
36
36
18
4.0
---
10
Value
Typ.
---
---
---
---
---
---
Max.
---
---
---
---
15
100
Unit
V
V
V
V
mA
---
DYNAMIC
Symbol
POUT
GP
COB
f =175 MHz
f =175 MHz
f = 1 MHz
Test Conditions
PIN = 25 W
PIN = 25 W
VCB = 12.5 V
VCC=12.5V
VCC=12.5V
Min.
100
6.0
---
Value
Typ.
---
---
---
Max.
---
---
390
Unit
W
dB
pF
IMPEDANCE DATA
FREQ
ZIN(Ω )
175 MHz
1.5 - j0.9
ZCL(Ω )
0.5 - j1.0
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.


Part Number MS1003
Description RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Maker Advanced Power Technology
PDF Download

MS1003 Datasheet PDF






Similar Datasheet

1 MS1000 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Advanced Power Technology
2 MS1001 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Advanced Power Technology
3 MS1003 (MS1003 / MS1004) 10 AMP SCHOTTKY BARRIER RECTIFIERS
Microsemi Corporation
4 MS1003 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Advanced Power Technology
5 MS1003SH Control IC
SHINDENGEN
6 MS1004 (MS1003 / MS1004) 10 AMP SCHOTTKY BARRIER RECTIFIERS
Microsemi Corporation
7 MS1004SH Control IC
SHINDENGEN
8 MS1005 (MS1005 / MS1006) 10 AMP SCHOTTKY BARRIER RECTIFIER
Microsemi Corporation
9 MS1006 (MS1005 / MS1006) 10 AMP SCHOTTKY BARRIER RECTIFIER
Microsemi Corporation





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy