MS1003
MS1003 is RF & MICROWAVE TRANSISTORS manufactured by Advanced Power Technology.
Features
- -
- -
- 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 d B MINIMUM MON EMITTER CONFIGURATION
DESCRIPTION
:
The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM munications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and efficiency over the 136-175 MHz band.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VCES VEBO IC PDISS TJ T STG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
Value
36 18 36 4.0 20 270 +200 -65 to +150
Unit
V V V V A W °C °C
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 0.65 ° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at .ADVANCEDPOWER. or contact our factory direct.
140 MERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
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STATIC
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C)
Symbol
BVCBO BVCES BVCEO BVEBO ICES h FE IC = 50m A IC = 100m A IC = 100m A IE = 10m A VCE = 15V VCE = 5V
Test Conditions
IE = 0m A VBE = 0V IB = 0m A IC = 0m A IE = 0m A IC = 5A
Min.
36 36 18 4.0 --10
Value Typ.
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Max.
--------15 100
Unit
V V V V m A ---
DYNAMIC
Symbol POUT GP COB f =175 MHz f =175 MHz f = 1 MHz
Test Conditions
PIN = 25 W PIN = 25 W VCB = 12.5 V VCC=12.5V...
