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MS1329 - RF & MICROWAVE TRANSISTORS

General Description

The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118

136 MHz and 28 V Class C ground station transmitters.

Emitter ballast resistors and gold metalitzation provide optimum VSWR capability.

Key Features

  • 150 MHz.
  • 28 VOLTS.
  • POUT = 60W.
  • GP = 7.0 dB.

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Datasheet Details

Part number MS1329
Manufacturer Advanced Power Technology
File Size 183.31 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1329 Datasheet

Full PDF Text Transcription for MS1329 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MS1329. For precise diagrams, and layout, please refer to the original PDF.

RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is ...

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dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters. Emitter ballast resistors and gold metalitzation provide optimum VSWR capability. MS1329 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS IC Power Dissipation Collector current TJ Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-Case 053-7067 Re

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