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MS1337 - RF & MICROWAVE TRANSISTORS

Description

The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications.

The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.

Features

  • 175 MHz.
  • 12.5 VOLTS.
  • POUT = 30W.

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Datasheet preview – MS1337

Datasheet Details

Part number MS1337
Manufacturer Advanced Power Technology
File Size 103.92 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1337 Datasheet
Additional preview pages of the MS1337 datasheet.

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Full PDF Text Transcription

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RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. MS1337 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VCES VEBO IC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current PDISS TJ Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7069 Rev - 10-2002 Value 36 18 36 4.0 8.
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