MS2210 applications equivalent, rf and microwave transistors avionics applications.
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* 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 300W MINIMUM Gp = 7.0 dB LOW THERMAL RESISTANCE INPUT/O.
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* 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED Po.
The MS2210 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width DataSheet4U.com constraints such as ground/ship DME/.
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