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1N5709B Datasheet Preview

1N5709B Datasheet

ABRUPT VARACTOR DIODE

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1N5709B
ABRUPT VARACTOR DIODE
DESCRIPTION:
The ASI 1N5709B is an Abrupt Varactor
Diode, designed for general purpose
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MAXIMUM RATINGS
IR 20 nA
VR 70 V
PDISS
400 mW @ TA = 25 °C
TJ -65 °C to +175 °C
TSTG
-65 °C to +200 °C
θJC 250 °C/W
PACKAGE STYLE DO-7
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
VBR IR = 10 µA
IR VR = 60 V
TA = 150 °C
CT VR = 4.0 V
f = 1.0 MHz
CT4/CT60 VR = 4.0 V/VR = 60 V
f = 1.0 MHz
Q VR = 4.0 V
f = 50 MHz
MINIMUM
65
77.9
3.2
150
TYPICAL MAXIMUM
20
20
86.1
3.4
UNITS
V
nA
µA
pF
--
--
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Part Number 1N5709B
Description ABRUPT VARACTOR DIODE
Maker Advanced Semiconductor
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1N5709B Datasheet PDF






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