2N5583 transistor equivalent, pnp silicon high frequency transistor.
PACKAGE STYLE
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +.
The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications.
PACKAGE STYLE
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 350 °C/W
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