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2N5583 - PNP Silicon High Frequency Transistor

Description

The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications.

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Datasheet Details

Part number 2N5583
Manufacturer Advanced Semiconductor
File Size 45.77 KB
Description PNP Silicon High Frequency Transistor
Datasheet download datasheet 2N5583 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 350 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(SAT) VBE(ON) ft Ccb Ceb rb'Cc td tr tf IC = 10 mA IC = 10 µA TC = 25 °C TEST CONDITIONS IC = 100 µA VCB = -20 V VEB = -2.0 V VCE = -2.0 V VCE = -5.0 V IC = 100 mA VCE = -2.0 V VCE = -10 V VCB = -15 V VEB = -0.5 V VCB = -10 V VCC = -31.4 V RC = 160 Ω w w .D w IC = 40 mA IC = 100 mA IC = 300 mA IB = 10 mA IC = 100 mA IC = 40 mA IC = 100 mA t a S a e h t e U 4 .c m o NONE MINIMUM -30 -30 -3.
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