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ACR3001 - NPN SILICON RF POWER TRANSISTOR

General Description

The ACR3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz.

Key Features

  • PG = 7 dB min. at 1.0 W / 3,000 MHz.
  • Hermetic Microstrip Package.
  • Omnigold™ Metalization System DIM A L G H J F I K M NP.

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Datasheet Details

Part number ACR3001
Manufacturer Advanced Semiconductor
File Size 35.11 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet ACR3001 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.in ACR3001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ACR3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: • PG = 7 dB min. at 1.0 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC O O B C D E F .255 / 6.48 .132 / 3.35 200 mA 30 V 6.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 25 C/W O O O O .117 / 2.97 G H I J K L M N P .