Datasheet4U Logo Datasheet4U.com

AT41470 Datasheet NPN SILICON BIPOLAR TRANSISTOR

Manufacturer: Advanced Semiconductor

Datasheet Details

Part number AT41470
Manufacturer Advanced Semiconductor
File Size 68.43 KB
Description NPN SILICON BIPOLAR TRANSISTOR
Download AT41470 Download (PDF)

General Description

: The ASI AT41470 is a Common Emitter Device Designed for low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies.

PACKAGE STYLE MAXIMUM RATINGS IC VCEO VCBO VEBO PDISS TJ TSTG 60 mA 12 V 20 V 1.5 V 500 mW @ TC = 25°C -65 °C to +200 °C -65 °C to +150 °C 1 = BASE 2 & 4 = EMITTER 3 = COLLECTOR CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB ft S21E  P1dB G1dB 2 TC = 25 C O TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 8.0 V VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 25 mA IC = 25 mA IC = 25 mA IC = 25 mA IC = 10 mA IC = 10 mA f = 1.0 MHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz MINIMUM TYPICAL MAXIMUM 200 1.0 30 150 0.2 8.0 12.0 6.5 19.0 18.5 15.0 10.5 1.3 1.6 3.0 1.9 300 UNITS Na µA --pF GHz dB dBm dB NFO dB A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.

Overview

( DataSheet : www.DataSheet4U.com ) AT41470 NPN SILICON BIPOLAR.