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Advanced Semiconductor

AVD0.5P Datasheet Preview

AVD0.5P Datasheet

NPN SILICON RF POWER TRANSISTOR

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AVD0.5P
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVD0.5P is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 300 mA
VCE 20 V
PDISS
TJ
TSTG
θJC
--- W
-65 OC to +200 OC
-65 OC to +150 OC
35.0 OC/W
PACKAGE STYLE .280 4L PILL
A
S
ØB D
S
G
ØC
D
EF
DIM
MINIMUM
inches / mm
A .220 / 5.59
B
C .275 / 6.99
D .004 / 0.10
E .050 / 1.27
F .118 / 3.00
MAXIMUM
inches / mm
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
ORDER CODE: ASI10551
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1 mA
BVCEO
IC = 5 mA
BVEBO
IE = 1 mA
ICES VCE = 28 V
hFE VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
50
20
3.5
1.0
15 120
UNITS
V
V
V
mA
---
PG
VCC = 12.5 V POUT = 0.5 W f = 1025 - 1150 MHz
10
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Part Number AVD0.5P
Description NPN SILICON RF POWER TRANSISTOR
Maker Advanced Semiconductor
Total Page 1 Pages
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