FH1100 diode equivalent, silicon diode.
INCLUDE:
* QS = 1.6 pC Typ.
* C = 1.0 pF Max. @ f = 890 MHz
* Hermetic Glass Package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG Tsoldering 10 mA 5.0 V 100 mW @ TC =.
The ASI FH1100 is a Silicon Diffused Hot Carrier Diode.
PACKAGE STYLE DO-7
FEATURES INCLUDE:
* QS = 1.6 pC Typ.
* C = 1.0 pF Max. @ f = 890 MHz
* Hermetic Glass Package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG Tsoldering 10 mA 5.0 V 100 mW.
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