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FH1100 - SILICON DIODE

Description

The ASI FH1100 is a Silicon Diffused Hot Carrier Diode.

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Datasheet Details

Part number FH1100
Manufacturer Advanced Semiconductor
File Size 49.62 KB
Description SILICON DIODE
Datasheet download datasheet FH1100 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FH1100 SILICON DIODE DESCRIPTION: The ASI FH1100 is a Silicon Diffused Hot Carrier Diode. PACKAGE STYLE DO-7 FEATURES INCLUDE: • QS = 1.6 pC Typ. • C = 1.0 pF Max. @ f = 890 MHz • Hermetic Glass Package MAXIMUM RATINGS IF VR PDISS TJ TSTG Tsoldering 10 mA 5.0 V 100 mW @ TC = 25 °C -65 °C to +125 °C -65 °C to +150 °C +260 °C for 5 Seconds CHARACTERISTICS SYMBOL VF IR VBR CT0 NF QS IF = 10 mA IF = 10 mA VR = 1.0 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 550 1.0 UNITS mV µA V IR = 100 µA VR = 0 V f = 1.0 MHz f = 890 MHz 5.0 1.0 10 1.6 pF dB pC A D V A N C E D S E M I C O N D U C T O R, I N C 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV.
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