LT3014 transistor equivalent, npn silicon rf power transistor.
INCLUDE:
* Gold Metalization
* Emitter Ballasting
* High Gain
PACKAGE STYLE .280 4L STUD
MAXIMUM RATINGS
IC VCB PDISS TJ T STG θ JC 300 mA 45 V 5.0 W @ TC =.
up to 1.0 GHz.
FEATURES INCLUDE:
* Gold Metalization
* Emitter Ballasting
* High Gain
PACKAGE STYLE .280 4.
The ASI LT3014 is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applications up to 1.0 GHz.
FEATURES INCLUDE:
* Gold Metalization
* Emitter Ballasting
* High Gain
PACKAGE STYLE .280 4L STUD
MAXIMUM RATI.
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