MRF555 transistor equivalent, npn silicon rf transistor.
* 12.5 V, 470 MHz. * POUT = 1.5 W * GP = 11 min. * η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCBO 30 V PDISS 3.0 W @ TC = 75 °C TJ -65 °C to +200 °.
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