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MRF837 Datasheet - Advanced Semiconductor

NPN SILICON RF LOW POWER TRANSISTOR

MRF837 Features

* INCLUDE:

* Min gain 8.0 dB @ 750 mW/870 MHz

* Silicon Nitride passivated

* Low cost Plastic Package K L N IC VCBO PDISS TJ TSTG θJC 200 mA 36 V 1.0 W @ TC = 25 °C -65 °Cto +150 °C -65 °Cto +150 °C 40 °C/W 1 = COLLECTOR 2 =EMITER 3 = BASE CHARACTERISTICS SYMBOL BVCES BVCEO

MRF837 General Description

The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. PACKAGE STYLE MACRO-X MILLIMETERS DIM MIN A C D F G 4.44 1.90 0.84 0.20 0.76 7.24 10.54 *MAX 5.21 2.54 0.99 0.30 0.14 8.13 11.43 1.65 INCHES MIN 0.175 0.075 0.033 0.008 0..

MRF837 Datasheet (187.54 KB)

Preview of MRF837 PDF

Datasheet Details

Part number:

MRF837

Manufacturer:

Advanced Semiconductor

File Size:

187.54 KB

Description:

Npn silicon rf low power transistor.

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TAGS

MRF837 NPN SILICON LOW POWER TRANSISTOR Advanced Semiconductor

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