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OSC-13SH Datasheet Preview

OSC-13SH Datasheet

NPN SILICON RF POWER TRANSISTOR

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OSC-1.3SH
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI OSC-1.3SH is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 700 mA
VCC
PDISS
TJ
TSTG
θJC
30 V
17.6 W @ TC 50 OC
-65 OC to +200 OC
-65 OC to +200 OC
8.5 OC/W
PACKAGE STYLE .250 2L FLG
A
C
B
E
ØD
.060 x 45°
CHAMFER
G
L
HF
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .028 / 0.71
.032 / 0.81
B .740 / 18.80
C .245 / 6.22
.255 / 6.48
D .128 / 3.25
.132 / 3.35
E .125 / 3.18
F .110 / 2.79
.117 / 2.97
G .117 / 2.97
H .560 / 14.22
.570 / 14.48
I .790 / 20.07
.810 / 20.57
J .225 / 5.72
.235 / 5.97
K .165 / 4.19
.185 / 4.70
L .003 / 0.08
.007 / 0.18
M .058 / 1.47
.068 / 1.73
N .119 / 3.02
.135 / 3.43
P .149 / 3.78
.187 / 4.75
ORDER CODE: ASI10638
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCER
IC = 5.0 mA
RBE = 10
BVEBO
IE = 1.0 mA
ICBO
VCB = 28 V
hFE VCE = 5.0 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
0.5
30 300
UNITS
V
V
V
mA
---
COB VCB = 28 V
f = 1.0 MHz
12 pF
PG VCC = 21 V
ICQ = 200 mA
f = 2.7 GHz
4.5
ηC POUT = 1.3 W
30
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Part Number OSC-13SH
Description NPN SILICON RF POWER TRANSISTOR
Maker Advanced Semiconductor
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