• Part: RT6105X
  • Description: NPN SILICON RF POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Advanced Semiconductor
  • Size: 35.01 KB
Download RT6105X Datasheet PDF
Advanced Semiconductor
RT6105X
RT6105X is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION : The ASI RT6105X is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES : - mon Emitter - PG = 15 d B at 5.0 W/225 MHz - Omnigold™ Metalization System D C J E I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 55 V 30 V 4.0 V 50 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 3.5 °C/W DIM A B C D E F G H I J K F G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 CHARACTERISTICS SYMBOL BVCEO BVCER BVCBO BVEBO h FE COB PG IMD1 ψ IC = 50 m A IC = 20 m A IC = 20 m A IE = 2.0 m A VCE = 5.0 V VCB = 28 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 30 55 55 4.0 UNITS IC = 100 m A f = 1.0 MHz f = 225 MHz 120 35 --p F d B d Bc VCE = 28 V POUT = 5.0 W IC = 1.0 A 15 -55 No Degradation in Output Power VCE = 28 V POUT = 5.0 W IC = 1.0 A .. f = 225 MHz Vision Carrier = -8 d B ref. Sound Carrier = -7 d B ref. Sideband Signal = -16 d B ref. f = 225 MHz VCE = 28 V POUT = 5.0 W IC = 1.0 A Load VSWR = 00:1, All Phase Angles A D V A N C E D S E M I C O N D U C T O R, I N...