RT6105X
RT6105X is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI RT6105X is Designed for Television Band III Applications up to 225 MHz.
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES
:
- mon Emitter
- PG = 15 d B at 5.0 W/225 MHz
- Omnigold™ Metalization System
D C J E I
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 55 V 30 V 4.0 V 50 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 3.5 °C/W
DIM A B C D E F G H I J K
F G H K MINIMUM inches / mm
#8-32 UNC MAXIMUM inches / mm
1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99
1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48
.255 / 6.48 .217 / 5.51 .285 / 7.24
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVCBO BVEBO h FE COB PG IMD1 ψ IC = 50 m A IC = 20 m A IC = 20 m A IE = 2.0 m A VCE = 5.0 V VCB = 28 V
TC = 25 °C
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
30 55 55 4.0
UNITS
IC = 100 m A f = 1.0 MHz f = 225 MHz
120 35
--p F d B d Bc
VCE = 28 V POUT = 5.0 W IC = 1.0 A
15 -55 No Degradation in Output Power
VCE = 28 V POUT = 5.0 W IC = 1.0 A .. f = 225 MHz Vision Carrier = -8 d B ref. Sound Carrier = -7 d B ref. Sideband Signal = -16 d B ref. f = 225 MHz
VCE = 28 V POUT = 5.0 W IC = 1.0 A Load VSWR = 00:1, All Phase Angles
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