Datasheet4U Logo Datasheet4U.com

SD1222-5 - NPN SILICON RF POWER TRANSISTOR

Description

The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations.

Features

  • PG = 8.2 dB min. at 5 W/30 MHz.
  • IMD3 = -30 dBc max. at 20 W (PEP).
  • Omnigold™ Metalization System.
  • Emitter Ballasting E B F.

📥 Download Datasheet

Datasheet Details

Part number SD1222-5
Manufacturer Advanced Semiconductor
File Size 45.65 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet SD1222-5 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SD1220-1 VHF Communications Transistors Thomson CSF
SD1224 RF & MICROWAVE TRANSISTORS Microsemi Corporation
SD1224 RF AND MICROWAVE TRANSISTORS Advanced Power Technology
SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS ST Microelectronics
SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Microsemi Corporation

Other Datasheets by Advanced Semiconductor

Part Number Description
SD1006 NPN SILICON HIGH FREQUENCY TRANSISTOR
SD1425 RF AND MICROWAVE TRANSISTORS
SD1441 NPN SILICON RF POWER TRANSISTOR
SD1460 NPN Silicon RF Power Transistor
SD1490 NPN Silicon RF Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SD1222-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES: • PG = 8.2 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 20 W (PEP) • Omnigold™ Metalization System • Emitter Ballasting E B F MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 30 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 5.83 °C/W DIM CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICES hFE Cob GP TC = 25 °C IC = 200 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCC = 27 V IC = 200 mA w w NONETEST CONDITIONS w .
Published: |