Datasheet Summary
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ASI TPV3100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV3100 is a Class AB mon Device Designed for Television Band IV & V Applications.
Features
INCLUDE:
- Gold Metalization
- Emitter Ballasting Internal Matching
- PACKAGE STYLE .450 BAL FLG.(A)
MAXIMUM RATINGS
IC VCC PDISS TJ T STG θ JC 12 A 65 V 215 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 0.80 OC/W
1 = Collector 2 = Base 3 = Emitter
CHARACTERISTICS
SYMBOL
BV CBO BV CER BV EBO ICER hFE P1dB Pg IC = 20 mA IC = 10 mA IE = 10 mA VCE = 28 V VCE = 10 V VCE = 28 V VCE = 28 V
TC = 25 OC
TEST CONDITIONS
RBE = 75 Ω RBE = 75 Ω IC = 2.0 A ICQ =2X50 mA ICQ =2X50 mA Fo = 860 MHz Fo =...
