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TPV3100 - NPN Silicon RF Power Transistor

Description

The ASI TPV3100 is a Class AB Common Device Designed for Television Band IV & V Applications.

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Datasheet Details

Part number TPV3100
Manufacturer Advanced Semiconductor
File Size 50.50 KB
Description NPN Silicon RF Power Transistor
Datasheet download datasheet TPV3100 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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w w w D .a a tS h e e 4 tU c .o m ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV3100 is a Class AB Common Device Designed for Television Band IV & V Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting Internal Matching • PACKAGE STYLE .450 BAL FLG.(A) MAXIMUM RATINGS IC VCC PDISS TJ T STG θ JC 12 A 65 V 215 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 0.80 OC/W 1 = Collector 2 = Base 3 = Emitter CHARACTERISTICS SYMBOL BV CBO BV CER BV EBO ICER hFE P1dB Pg IC = 20 mA IC = 10 mA IE = 10 mA VCE = 28 V VCE = 10 V VCE = 28 V VCE = 28 V TC = 25 OC TEST CONDITIONS RBE = 75 Ω RBE = 75 Ω IC = 2.0 A ICQ =2X50 mA ICQ =2X50 mA Fo = 860 MHz Fo = 860 MHz MINIMUM TYPICAL MAXIMUM 65 30 4.0 10 30 100 8.5 9.5 120 UNITS V V V mA --W dB www.
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