MSS50 Datasheet High Barrier Silicon Schottky Diodes

Manufacturer: Aeroflex

MSS50 high barrier silicon schottky diodes by Aeroflex - Datasheet Preview

Datasheet Details

Part number	MSS50
Manufacturer	Aeroflex
File Size	170.29 KB
Description	High Barrier Silicon Schottky Diodes
Download	MSS50 Download (PDF)

General Description

The Aeroﬂex / Metelics MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.

Overview

MSS50,000 Series High Barrier Silicon Schottky Diodes.

Key Features

VF , RD and CJ matching options.
Chip, beam lead or packaged devices.
Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 100 mW per junction at TA = 25 ºC, derate linearly to zero at TA = +150 ºC + 260 ºC for 5 sec.

📁 Similar Datasheet

Part Number	Description	Manufacturer
MSS50	(MSS40 / MSS50) BACK TO BACK SCR MODULE	ST Microelectronics
MSS50	(MSS40 / MSS60) BACK TO BACK SCR MODULE	Comset Semiconductors
MSS50-048-C15	High Barrier Silicon Schottky Diodes	MA-COM
MSS50-048-P55	High Barrier Silicon Schottky Diodes	MA-COM
MSS50-048-P86	High Barrier Silicon Schottky Diodes	MA-COM

More Datasheets from Aeroflex

Part Number	Description
MSS39	P-Type Silicon Schottky Diodes
MSS60	Extra High Barrier Silicon Schottky Diodes