25ns maximum (3.3 volt supply) address access time Dual cavity package contains two (2) 512K x 8 industrystandard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width TTL compatible inputs and output levels, three-state bidirectional data bus Typical radiation performance - Total dose: 50krad(Si) - SEL Immune >80 MeV-cm2/mg - LETTH(0.25) = >10 MeV-cm2/mg - Saturated Cross Section cm2 per bit, 5.0E-9 -.
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Standard Products Data Sheet January, 2003 QCOTSTM UT8Q1024K8 SRAM FEATURES 25ns maximum (3.3 volt supply) address access time Dual cavity package contains two (2) 51...
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supply) address access time Dual cavity package contains two (2) 512K x 8 industrystandard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width TTL compatible inputs and output levels, three-state bidirectional data bus Typical radiation performance - Total dose: 50krad(Si) - SEL Immune >80 MeV-cm2/mg - LETTH(0.25) = >10 MeV-cm2/mg - Saturated Cross Section cm2 per bit, 5.0E-9 - <1E-8 errors/bit-day, Adams 90% geosynchronous heavy ion Packaging options: - 44-lead bottom brazed dual CFP (BBTFP) (4.
8Q1024K8SRAM Datasheet
