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Agilent

ABA-32563 Datasheet Preview

ABA-32563 Datasheet

2.5 GHz Broadband Silicon RFIC Amplifier

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Agilent ABA-32563
2.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Features
• Operating Frequency DC ~ 2.5 GHz
• 19 dB Gain
• VSWR < 2.0 throughout operating
frequency
• 8.4 dBm Output P1dB
Description
Agilent’s ABA-32563 is an
economical, easy-to-use, inter-
nally 50matched, silicon
monolithic broadband amplifier
that offers excellent gain and
broadband response from DC to
2.5 GHz. Packaged in an ultra-
miniature SOT-363 package, it
requires half the board space of
a SOT-143 package.
At 2 GHz, the ABA-32563 offers
a small-signal gain of 19 dB,
output P1dB of 8.4 dBm and
19.5 dBm output third order
intercept point. It is suitable for
use as wideband applications.
They are designed for low cost
gain blocks in cellular applica-
tions, DBS tuners, LNB and other
wireless communication systems.
Surface Mount Package
SOT-363 /SC70
Pin Connections and
Package Marking
GND 1
GND 2
Input
Output
& Vcc
GND 3
Vcc
Note:
Top View. Package marking provides orientation
and identification. “x” is the date code.
• 19.5 dBm Output IP3
• 3.5 dB Noise Figure
• Unconditionally Stable
• Single 3V Supply (Id = 37 mA)
• Lead-free
Applications
• Amplifier for Cellular, Cordless,
Special Mobile Radio, PCS, ISM,
Wireless LAN, DBS, TVRO, and TV
Tuner Applications
ABA-32563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a double-
diffused single polysilicon
process with self-aligned submi-
cron emitter geometry. The
process is capable of simulta-
neous high fT and high NPN
breakdown (25 GHz fT at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
Simplified Schematic
Vcc
RF
Input
Ground 2
Ground 3
RF
Output
& Vcc
Ground 1




Agilent

ABA-32563 Datasheet Preview

ABA-32563 Datasheet

2.5 GHz Broadband Silicon RFIC Amplifier

No Preview Available !

ABA-32563 Absolute Maximum Ratings[1]
Symbol Parameter
Vcc Device Voltage, RF output to ground (T = 25°C)
Pin CW RF Input Power (Vcc = 3V)
Pdiss Total Power Dissipation[3]
Tj Junction Temperature
TSTG Storage Temperature
Units
V
dBm
W
°C
°C
Absolute Max.
6
15
0.6
150
-65 to 150
Thermal Resistance[2] (Vcc = 3V)
θj-c = 124.3°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25°C. Derate 8.1 mW/°C for Tc > 120.8°C.
Electrical Specifications
Tc = +25°C, Zo = 50 , Pin = -30 dBm, Vcc = 3V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ. Max. Std Dev.
Gp[1]
Gp
NF[1]
P1dB[1]
OIP3[1]
VSWRin[1]
VSWRout[1]
Icc[1]
Td[1]
Power Gain (|S21|2)
Power Gain Flatness,
f = 0.1 ~ 1.5 GHz
f = 0.1 ~ 2.5 GHz
Noise Figure
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Group Delay
dB 17.5 19.0
dB 1.0
3.0
dB 3.5 4.4
dBm 8.4
dBm 19.5
<1.5
<1.5
mA 37 42.5
ps 140
Notes:
1. Measurements taken on 50test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Cblock
1 nF
RF Outp
F Input
Cblock
1 nF
RFC
33 nH
Cbypass
100 pF
Vcc
Cbypass
1000 pF
Figure 1. ABA-32563 Production Test Circuit.
2


Part Number ABA-32563
Description 2.5 GHz Broadband Silicon RFIC Amplifier
Maker Agilent
Total Page 8 Pages
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