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AT-42085 - Up to 6 GHz Medium Power Silicon Bipolar Transistor

Description

Agilent’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

The AT-42085 is housed in a low cost .085" diameter plastic package.

The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions.

Features

  • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz.
  • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz.
  • Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz.
  • High Gain-Bandwidth Product: 8.0 GHz Typical fT.
  • Low Cost Plastic Package.
  • Lead-free Option Available 2 AT-42085 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current P.

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Datasheet Details

Part number AT-42085
Manufacturer Agilent
File Size 66.95 KB
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor
Datasheet download datasheet AT-42085 Datasheet

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Agilent AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Agilent’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier.
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