Download HSCH-9161 Datasheet PDF
HSCH-9161 page 2
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HSCH-9161 page 3
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HSCH-9161 Key Features

  • Low Junction Capacitance
  • fc >200 GHz
  • Lower Temperature Coefficient than Silicon
  • Durable Construction -Typical 6 gram beam lead strength -High power handling capability

HSCH-9161 Description

The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process. Applications This diode is suitable for medium low barrier, zero bias detector applications.The HSCH916x is functional through W band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits. Assembly Techniques Diodes are ESD sensitive.