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AH8113 - CMOS HALL SWITCH

General Description

The AH8113 is an Integrated Hall-Effect Sensor designed specifically to meet the requirements of low-power devices.

e.g.

as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 2.4V-5.5V.

Key Features

  • Micro power design.
  • 2.4 V to 5.5 V battery operation.
  • High sensitivity and high stability of the magnetic switching points.
  • High resistance to mechanical stress.
  • Digital output signal.
  • Switching for both poles of a magnet (omnipolar).
  • Not suitable for automotive.

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Datasheet Details

Part number AH8113
Manufacturer AiT Semiconductor
File Size 436.37 KB
Description CMOS HALL SWITCH
Datasheet download datasheet AH8113 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AiT Semiconductor Inc. www.ait-ic.com AH8113 CMOS HALL SWITCH LOW CURRENT CONSUMPTION, HIGH SENSITIVITY DESCRIPTION The AH8113 is an Integrated Hall-Effect Sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 2.4V-5.5V. Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit. An onboard clock scheme is used to reduce the average operating current of the IC. During the operate phase the IC compares the actual magnetic field detected with the internally compensated switching points. The output Q is switched at the end of each operating phase.