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AiT Semiconductor

AM2317 Datasheet Preview

AM2317 Datasheet

-20V P-CHANNEL ENHANCEMENT MODE MOSFET MOSFET

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AiT Semiconductor Inc.
www.ait-ic.com
AM2317
MOSFET
-20V P-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
FEATURES
The AM2317 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density advanced trench technology.
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and low
in-line power loss are needed in a very small outline
surface mount package.
-20V/-4.6A, RDS(ON)=35mΩ(typ.)@VGS=-4.5V
-20V/-4.1A,RDS(ON)=45mΩ(typ.)@VGS=-2.5V
-20V/-3.6A,RDS(ON)=53mΩ(typ.)@VGS=-1.8V
Super high design for extremely low RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Full RoHS compliance
Available in SOT-23 Package
The AM2317 is available in SOT-23 package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM2317E3R
E3
AM2317E3VR
Note
V: Halogen free Package
R: Tape & Reel
AiT provides all RoHS products
Suffix V means Halogen free Package
APPLICATION
Power Management
Portable Equipment
DC/DC Converter
Load Switch
DSC
LCD Display inverter
TYPICAL APPLICATION
REV2.0
- NOV 2011 RELEASED, MAY 2013 UPDATED -
P-Channel
-1-




AiT Semiconductor

AM2317 Datasheet Preview

AM2317 Datasheet

-20V P-CHANNEL ENHANCEMENT MODE MOSFET MOSFET

No Preview Available !

AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM2317
MOSFET
-20V P-CHANNEL ENHANCEMENT MODE MOSFET
Pin #
1
2
3
Symbol
G
S
D
Top View
Function
Gate
Source
Drain
REV2.0
- NOV 2011 RELEASED, MAY 2013 UPDATED -
-2-


Part Number AM2317
Description -20V P-CHANNEL ENHANCEMENT MODE MOSFET MOSFET
Maker AiT Semiconductor
Total Page 8 Pages
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