AM3406 Description
FEATURES The AM3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance.
AM3406 Key Features
- 30V/6.0A, RDS(ON) = 20mΩ(typ.) @VGS = 10V
- 30V/4.8A, RDS(ON) = 27mΩ(typ.) @VGS = 4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and Maximum DC
- This is a Full Green pliance
- Available in SOT-23 Package
AM3406 Applications
- Power Management in Note book