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AM5853J8R - MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE

This page provides the datasheet information for the AM5853J8R, a member of the AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE family.

Description

The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density.

Advanced trench technology.

Features

  • MOSFET -20V/-3.5A, RDS(ON) ＜ 70mΩ@VGS = -4.5V -20V/-2.4A, RDS(ON) ＜ 95mΩ@VGS = -2.5V -20V/-1.8A, RDS(ON) ＜ 125mΩ@VGS = -1.8V.

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Datasheet preview – AM5853J8R

Datasheet Details

Part number AM5853J8R
Manufacturer AiT Semiconductor
File Size 528.24 KB
Description MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE
Datasheet download datasheet AM5853J8R Datasheet
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Full PDF Text Transcription

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AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES  MOSFET -20V/-3.5A, RDS(ON) ＜ 70mΩ@VGS = -4.5V -20V/-2.4A, RDS(ON) ＜ 95mΩ@VGS = -2.5V -20V/-1.8A, RDS(ON) ＜ 125mΩ@VGS = -1.8V  SCHOTTKY VKA =20V, VF0.43(Typ.)@IF =1A    Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Available in DFN8 (3x2) Package This high density process is especially tailored to minimize on-state resistance.
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