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AiT Semiconductor

AM8958 Datasheet Preview

AM8958 Datasheet

N+P PAIR ENHANCEMENT MODE MOSFET

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AiT Semiconductor Inc.
www.ait-ic.com
 
AM8958
MOSFET
N+P PAIR ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM8958 is the N & P-Channel enhancement
mode power field effect transistor using high cell
density DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching
performance. This device is particularly suited for
low voltage application such as notebook computer
power management and other battery powered
circuits, where high-side switching, low inline power
loss and resistance to transient are needed.
The AM8958 is available in SOP8 Package
N-Channel
30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V
30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V
P-Channel
-30V / -6.5A, RDS(ON) = 35mΩ(typ.)@VGS = -10V
-30V / -4.4A, RDS(ON) = 60mΩ(typ.)@VGS = -4.5V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in SOP8 Package
APPLICATION
ORDERING INFORMATION
Package Type
Part Number
SOP-8
AM8958M8R
M8
AM8958M8VR
Note
R: Tape & Reel
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
Power Management in Note book
Portable Equipment
Battery Powered System
P-CHANNEL MOSFET
N-Channle
P-Channle
REV1.0
 
- JUL 2010 RELEASED –
-1-




AiT Semiconductor

AM8958 Datasheet Preview

AM8958 Datasheet

N+P PAIR ENHANCEMENT MODE MOSFET

No Preview Available !

AiT Semiconductor Inc.
www.ait-ic.com
 
PIN DESCRIPTION
AM8958
MOSFET
N+P PAIR ENHANCEMENT MODE
Pin #
1
2
3
4
5
6
7
8
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Top View
Source1
Gate1
Source2
Gate2
Drain2
Drain2
Drain1
Drain1
Function
REV1.0
 
- JUL 2010 RELEASED –
-2-


Part Number AM8958
Description N+P PAIR ENHANCEMENT MODE MOSFET
Maker AiT Semiconductor
Total Page 10 Pages
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