AFN3814W Datasheet, Alfa-MOS

20V/ 14A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 12A,RDS(ON)=18mΩ@VGS=2.5V 20V/ 10A,RDS(ON)=30mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) DFN3X3-8L package d.

Pin Description ( DFN3X3-8L ) AFN3814W 20V N-Channel Enhancement Mode MOSFET Features 20V/ 14A,RDS(ON)=14mΩ@VGS=4.5V 2.

AFN3814W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.