AFN4286WS mosfet equivalent, n-channel mosfet.
40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/5A,RDS(ON)= 38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Synchronous Rectif.
Pin Description ( SOP-8P )
AFN4286WS
40V N-Channel Enhancement Mode MOSFET
Features
40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/5.
AFN4286WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.
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