AFN9004S - N-Channel Enhancement Mode MOSFET

Alfa-MOS

Download the AFN9004S datasheet PDF. This datasheet also covers the AFN9004S-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

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AFN9004S n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN9004S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN9004S
Manufacturer	Alfa-MOS
File Size	658.08 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN9004S Datasheet

General Description

AFN9004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Overview

Alfa-MOS Technology AFN9004S 40V N-Channel Enhancement Mode MOSFET.

Key Features

40V/25A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.1mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin.

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