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Alfa-MOS

AFN9004S Datasheet Preview

AFN9004S Datasheet

N-Channel Enhancement Mode MOSFET

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Alfa-MOS
Technology
AFN9004S
40V N-Channel
Enhancement Mode MOSFET
General Description
AFN9004S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage
power management, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Features
40V/25A,RDS(ON)= 3.3m@VGS=10V
40V/20A,RDS(ON)= 4.1m@VGS=4.5V
Super high density cell design for extremely low RDS
(ON)
TO-263-2L package design
Pin Description ( TO-263-2L )
Application
Power supply
--- Secondary synchronous rectification
DC/DC converter
Power tools
Pin Define
Pin
1
2
3
Symbol
G
D
S
Ordering Information
Part Ordering No.
Part Marking
9004S
Package
AFN9004ST263RG
AAAAAA
TO-263-2L
BBBBBB
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN9004ST263RG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Nov. 2015
Description
Gate
Drain
Source
Unit
Tape & Reel
Quantity
800 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFN9004S Datasheet Preview

AFN9004S Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN9004S
40V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TC=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Single Pulse Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TC=25к
TC=70к
TC=25к
TA=25к
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
PD
TJ
TSTG
RθJA
Typical
40
±20
90
90
160
80
40
250
3.75
150
-55/150
62.5
Unit
V
V
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Nov. 2015
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=32V,VGS=0V
VDS=32V,VGS=0V
TJ=85к
VDSЊ˄ ˃ V,VGS=10V
VGS=10V,ID=25A
VGS=4.5V,ID=20A
VDS=15V,ID=15A
IS=10A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=20V,VGS=10V
ID= 20A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=2
ID10A,VGEN=10V
RG=1
Min. Typ Max. Unit
40 V
1.0 2.0
±100
1
10
nA
uA
50 A
2.78
3.58
3.3
4.1
m
75 S
0.85 1.3 V
60 100
12 nC
10
4500
520 pF
180
10 20
8
40
18
75
ns
8 18
www.alfa-mos.com
Page 2


Part Number AFN9004S
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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