AFP2319A Datasheet, Alfa-MOS

* ID=-3.0A,RDS(ON)=90mΩ@VGS=-10V
* ID=-2.4A,RDS(ON)=120mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistanc.

Pin Description ( SOT-23 ) AFP2319A 40V P-Channel Enhancement Mode MOSFET Features
* ID=-3.0A,RDS(ON)=90mΩ@VGS=-10.

AFP2319A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.