AFP7401S Datasheet, Alfa-MOS

-30V/-2.8A,RDS(ON)=115mΩ@VGS=-10.0V -30V/-2.5A,RDS(ON)=150mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=185mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Except.

Pin Description ( SOT-323 ) AFP7401S 30V P-Channel Enhancement Mode MOSFET Features -30V/-2.8A,RDS(ON)=115mΩ@VGS=-10.0.