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AHV85111 - Self-Powered Single-Channel Isolated GaNFET Driver

General Description

The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications and topologies.

An isolated dual positive/negative output bias supply is integrated into the driver, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap.

Key Features

  • Transformer isolation barrier.
  • Power-Thru integrated isolated bias.
  • No need for high-side bootstrap.
  • No need for external secondary-side bias.
  • AEC-Q100 Grade 2 qualification.
  • Bipolar drive output with adjustable regulated positive rail.
  • Built-in primary-side 3.3 V REF bias output.
  • 50 ns propagation delay.
  • Supply voltage 10.8 V < VDRV < 13.2 V.
  • Undervoltage lockout on primary VDRV and secondary VSEC.

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Other Datasheets by Allegro MicroSystems

Part Number Description
AHV85110 Self-Powered Single-Channel Isolated GaNFET Driver
AHV85000 GaN FET Isolated Gate Driver
AHV85040 GaN FET Isolated Gate Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AHV85111 Self-Powered Single-Channel Isolated GaN FET Driver with Regulated Bipolar Output Drive FEATURES AND BENEFITS • Transformer isolation barrier • Power-Thru integrated isolated bias □ No need for high-side bootstrap □ No need for external secondary-side bias • AEC-Q100 Grade 2 qualification • Bipolar drive output with adjustable regulated positive rail • Built-in primary-side 3.3 V REF bias output • 50 ns propagation delay • Supply voltage 10.8 V < VDRV < 13.2 V • Undervoltage lockout on primary VDRV and secondary VSEC • Enable pin with fast response • Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor • CMTI > 100 V/ns dv/dt immunity • Creepage distance 8.