AS4C256K16E0 dram equivalent, 5v 256k x 16 cmos dram.
* Organization: 262,144 words × 16 bits
* High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time
* .
from CAS precharge
CAS precharge time
EDO page mode RMW cycle Page mode CAS pulse width (RMW)
RAS pulse width
Shaded .
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A8 A7 A6 A5 A4 GND
AS4C256K16E0
AS4C256K16E0
VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7
1 2 3 4 5 6 7 8 9 10
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