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AS4LC4M4F1 - 4M x 4 CMOS DRAM

Description

Address inputs Row address strobe Column address strobe Write enable Input/output Output enable Power Ground AS4LC4M4F1 TSOP availability to be determined Selection guide Symbol Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) acce

Features

  • Organization: 4,194,304 words × 4 bits.
  • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time.
  • Refresh - 2048 refresh cycles, 32 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh.
  • TTL-compatible, three-state I/O.
  • JEDEC standard package - 300 mil, 24/26-pin SOJ.
  • Low power consumption - Active: 500 mW max - Standby: 3.6 mW max, CMOS I/O.
  • Fast page mode.

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Datasheet Details

Part number AS4LC4M4F1
Manufacturer Alliance Semiconductor
File Size 295.20 KB
Description 4M x 4 CMOS DRAM
Datasheet download datasheet AS4LC4M4F1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com May 2001 ® AS4LC4M4F1 4M×4 CMOS DRAM (Fast Page) 3.3V Family Features • Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Refresh - 2048 refresh cycles, 32 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh • TTL-compatible, three-state I/O • JEDEC standard package - 300 mil, 24/26-pin SOJ • Low power consumption - Active: 500 mW max - Standby: 3.6 mW max, CMOS I/O • Fast page mode • 3.
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