AS4LC4M4F1 dram equivalent, 4m x 4 cmos dram.
* Organization: 4,194,304 words × 4 bits
* High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
* Refresh
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This device features a high speed page-mode operation where read and write operations within a single row (or page) can.
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