Datasheet Details
| Part number | AO4290A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 380.32 KB |
| Description | 100V Channel AlphaSGT |
| Download | AO4290A Download (PDF) |
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Overview: AO4290A 100V Channel AlphaSGT TM General.
| Part number | AO4290A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 380.32 KB |
| Description | 100V Channel AlphaSGT |
| Download | AO4290A Download (PDF) |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Driven • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 15.5A < 6.4mΩ < 7.6mΩ Applications • Synchronous Rectification for Quick Charger 3.0 • Synchronous Rectification for AC/DC adapter and DC/DC brick power 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View G S S S PIN1 Orderable Part Number AO4290A PIN1 Package Type SO-8 Top View 18 27 36 45 G D S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C VGS ID IDM IAS EAS VDS Spike Power Dissipation B 10µs TA=25°C TA=70°C VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 15.5 12 62 44 97 120 3.1 2.0 -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: July 2016 www.aosmd.com Page 1 of 5 AO4290A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=15.5A Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=13.5A VDS=5V, ID=15.5A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
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