Datasheet Details
| Part number | AO4294 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 564.91 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AO4294-AlphaOmegaSemiconductors.pdf |
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Overview: AO4294 100V N-Channel MOSFET General.
| Part number | AO4294 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 564.91 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AO4294-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 11.5A < 12mΩ < 15.5mΩ Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D Orderable Part Number AO4294 G S S S Package Type SO-8 G S Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10μs TA=25°C Power Dissipation B TA=70°C VGS ID IDM IAS EAS VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 11.5 9 46 20 20 120 3.1 2.0 -55 to 150 Units V V A A mJ V W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.2.0: August 2020 www.aosmd.com Page 1 of 5 AO4294 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 VGS=10V, ID=11.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=9.5A gFS Forward Transconductance VDS=5V, ID=11.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4294 | N-Channel 100V Power MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4290A | 100V Channel AlphaSGT |
| AO4292 | 100V N-Channel MOSFET |
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