Datasheet Details
| Part number | AO4601 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 330.84 KB |
| Description | MOSFET |
| Datasheet |
 AO4601 Datasheet
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General Description
The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Standard Product AO4601 is Pb-free (meets ROHS & Sony 259 specifications).
Key Features
- D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±25 -8 -6.9 -50 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG ±12 4.7 4 30 2 1.44 -55 to 150 W °C Junction and Storage.