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AO4603 - MOSFET

Description

The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Standard product AO4603 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -30V VDS (V) = 30V ID = 4.7A (VGS=10V) -5.8A (VGS = -10V) RDS(ON) RDS(ON) < 55m Ω (VGS=10V) < 35mΩ (VGS = -10V) < 70m Ω (VGS=4.5V) < 58mΩ (VGS = -4.5V) < 110m Ω (VGS = 2.5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Max p-channel -30 ±20 -5.8 -4.9 -40 2 1.44 -55 to 150 W °C A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-So.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4603 Complementary Enhancement Mode Field Effect Transistor General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony 259 specifications). AO4603L is a Green Product ordering option. AO4603 and AO4603L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 4.7A (VGS=10V) -5.8A (VGS = -10V) RDS(ON) RDS(ON) < 55m Ω (VGS=10V) < 35mΩ (VGS = -10V) < 70m Ω (VGS=4.5V) < 58mΩ (VGS = -4.5V) < 110m Ω (VGS = 2.5V) D2 S2 G2 S1 G1 www.DataSheet4U.
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