AO4604
Description
The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The plementary MOSFETs may be used in power inverters, and other applications. AO4604 and AO4604L are electrically identical. -Ro HS pliant -AO4604L is Halogen Free
Features n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON)
< 28mΩ (VGS=10V)
< 42mΩ (VGS=4.5V) p-channel -30V
-5A (VGS = -10V) RDS(ON)
< 52mΩ (VGS = -10V) < 87mΩ (VGS = -4.5V)
100% Rg Tested!
SOIC-8
D2 D1
Top View
Bottom View
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
SOIC-8
G2 S2 n-channel
G1 S1 p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
6.9 5.8 30
Power Dissipation
TA=25°C TA=70°C
2 1.44
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel -30 ±20 -5 -4.2 -20 2 1.44
-55 to...
