Description
The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge..
Features
- n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON)
< 28mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
p-channel -30V
-5A (VGS = -10V) RDS(ON)
< 52mΩ (VGS = -10V) < 87mΩ (VGS = -4.5V)
100% Rg Tested!
SOIC-8
D2 D1
Top View
Bottom View
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
SOIC-8
G2 S2
n-channel
G1 S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70.