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Alpha & Omega Semiconductors

AO4604 Datasheet Preview

AO4604 Datasheet

MOSFET

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AO4604
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4604 uses advanced trench
technology MOSFETs to provide excellen
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in power inverters, and other applications.
AO4604 and AO4604L are electrically
identical.
-RoHS Compliant
-AO4604L is Halogen Free
Features
n-channel
VDS (V) = 30V
ID = 6.9A (VGS=10V)
RDS(ON)
< 28m(VGS=10V)
< 42m(VGS=4.5V)
p-channel
-30V
-5A (VGS = -10V)
RDS(ON)
< 52m(VGS = -10V)
< 87m(VGS = -4.5V)
100% Rg Tested!
SOIC-8
D2 D1
Top View
Bottom View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
6.9
5.8
30
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.44
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-5
-4.2
-20
2
1.44
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Maximum Junction-to-AmbientA
t 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AO4604 Datasheet Preview

AO4604 Datasheet

MOSFET

No Preview Available !

AO4604
N-CHANNEL: Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=5.0A
VDS=5V, ID=6.9A
IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1
20
10
0.004
1.9
1
5
100
3
22.5 28
31.3 38
34.5 42
15.4
0.76 1
3
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
680 820
102
77
1.2 2
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=6.9A
VGS=10V, VDS=15V, RL=2.2,
RGEN=3
IF=6.9A, dI/dt=100A/µs
IF=6.9A, dI/dt=100A/µs
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
17
8.1
20
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 4: Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.


Part Number AO4604
Description MOSFET
Maker Alpha & Omega Semiconductors
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AO4604 Datasheet PDF






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