Datasheet Details
| Part number | AO4606 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 504.37 KB |
| Description | 30V Complementary MOSFET |
| Datasheet | AO4606-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AO4606 30V Complementary MOSFET General.
| Part number | AO4606 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 504.37 KB |
| Description | 30V Complementary MOSFET |
| Datasheet | AO4606-AlphaOmegaSemiconductors.pdf |
|
|
|
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Product Summary N-Channel VDS= 30V ID= 6A (VGS=10V) RDS(ON) < 30mΩ (VGS=10V) < 42mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested P-Channel -30V -6.5A (VGS=-10V) RDS(ON) < 28mΩ (VGS=-10V) < 44mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G2 G1 S2 S1 Pin1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C 6 -6.5 ID 5 -5.3 IDM 30 -30 IAS, IAR 10 23 EAS, EAR 5 26 TA=25°C Power Dissipation B TA=70°C 2 2 PD 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max Units 62.5 °C/W 90 °C/W 40 °C/W Rev 10.1: August 2023 www.aosmd.com Page 1 of 9 AO4606 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.2 1.8 2.4 V ID(ON) On state drain current VGS=10V, VDS=5V 30 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A TJ=125°C 25 30 mW 40
Compare AO4606 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| AO4600 | MOSFET |
| AO4601 | MOSFET |
| AO4603 | MOSFET |
| AO4604 | MOSFET |
| AO4607 | MOSFET |
| AO4609 | MOSFET |
| AO4610 | MOSFET |
| AO4611 | MOSFET |
| AO4612 | MOSFET |
| AO4613 | MOSFET |