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AO7600 - MOSFET

Description

The AO7600/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications.

Both devices are ESD protected.

Features

  • n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V) p-channel -20V -0.6A (VGS=-4.5V) RDS(ON) RDS(ON) < 300mΩ (VGS=4.5V) < 550mΩ (VGS=-4.5V) < 350mΩ (VGS=2.5V) < 700mΩ (VGS=-2.5V) < 450mΩ (VGS=1.8V) < 950mΩ (VGS=-1.8V) SC-70-6 (SOT-323) Top View D1 D2 GG S1 1 6 G1 2 5 D2 3 4 D1 G2 S2 S1 n-channel S2 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain TA=25°C Current.

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Full PDF Text Transcription

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AO7600 Complementary Enhancement Mode Field Effect Transistor General Description The AO7600/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. AO7600 and AO7600L are electrically identical. -RoHS Compliant -AO7600L is Halogen Free Features n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V) p-channel -20V -0.6A (VGS=-4.5V) RDS(ON) RDS(ON) < 300mΩ (VGS=4.5V) < 550mΩ (VGS=-4.5V) < 350mΩ (VGS=2.5V) < 700mΩ (VGS=-2.5V) < 450mΩ (VGS=1.8V) < 950mΩ (VGS=-1.
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