Datasheet Details
| Part number | AOB10N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 554.16 KB |
| Description | 10A N-Channel MOSFET |
| Download | AOB10N60 Download (PDF) |
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| Part number | AOB10N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 554.16 KB |
| Description | 10A N-Channel MOSFET |
| Download | AOB10N60 Download (PDF) |
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Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 700V@150℃ 10A < 0.75W D AOT10N60 S D G AOTF10N60 S GD G S G AOB10N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT10N60/AOB10N60 AOTF10N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 10 10* 7.2 7.2* 36 4.4 290 580 45 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 2 50 0.4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT10N60/AOB10N60 65 0.5 AOTF10N60 65 -- Maximum Junction-to-Case RqJC 0.5 2.5 * Drain current limited by maximum junction temperature.
S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.9.0: January 2021 www.aosmd.com Page 1 of 6 AOT10N60/AOB10N60/AOTF10N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA,
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOB10N60 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOB10B60D | 10A Alpha IGBT |
| AOB10B65M1 | 10A Alpha IGBT |
| AOB10T60P | N-Channel MOSFET |
| AOB1100L | 100V N-Channel Rugged Planar MOSFET |
| AOB11C60 | 11A N-Channel MOSFET |
| AOB11N60 | 11A N-Channel MOSFET |
| AOB11S60 | Power Transistor |
| AOB11S60L | Power Transistor |
| AOB11S65 | Power Transistor |
| AOB11S65L | 650V 11A Power Transistor |