Datasheet Details
| Part number | AOB1100L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.42 KB |
| Description | 100V N-Channel Rugged Planar MOSFET |
| Download | AOB1100L Download (PDF) |
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| Part number | AOB1100L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 313.42 KB |
| Description | 100V N-Channel Rugged Planar MOSFET |
| Download | AOB1100L Download (PDF) |
|
|
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The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control.
With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 130A < 12mΩ 100% UIS Tested 100% Rg Tested TO220 Top View D Bottom View D Top View D TO-263 D2PAK Bottom View D D G D S S D G G AOB1100 S S G G S AOT1100 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C TC=100° C VGS ID IDM IDSM IAS EAS PD PDSM TJ, TSTG Maximum 100 ±20 130 92 208 8 6 122 744 500 250 2.1 1.3 -55 to 175 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 48 0.22 Max 15 60 0.3 Units ° C/W ° C/W ° C/W Rev0: Dec 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOT1100L/AOB1100L Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS, ID=250µΑ VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TO220 VGS=10V, ID=20A TO263 VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 2.6 208 10 19 9.7 53 0.69 12 22 11.7 1 130 4833 VGS=
AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOB1100L | N-Channel MOSFET | INCHANGE |
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AOB1100L | 100V N-Channel Rugged Planar MOSFET | Freescale |
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