Datasheet Details
| Part number | AOB125A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 486.09 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
 AOB125A60L Datasheet
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| Part number | AOB125A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 486.09 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
AOB125A60L Datasheet
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology TO-220 TO-220F Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-263 D2PAK D 700V 100A < 0.125Ω 39nC 6.3mJ D AOT125A60L S D G GD S AOTF125A60L S G AOB125A60L G S Orderable Part Number AOTF125A60L AOT125A60L AOB125A60L Package Type TO220F TO220 TO263 Form Tube Tube Tape&Reel Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain Current Pulsed Drain Current C TC=25°C TC=100°C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=20A,Tj=25°C VGS ID IDM IAR EAR EAS dv/dt dv/dt di/dt Power Dissipation B TC=25°C Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL AOT(B)125A60L AOTF125A60L 600 ±20 ±30 28 28* 18 18* 100 14 98 555 100 20 500 357 36 2.9 0.3 -55 to 150 300 Units V V V A A mJ mJ V/ns V/ns A/us W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOT(B)125A60L 65 0.5 0.35 AOTF125A60L 65 --3.4 Units °C/W °C/W °C/W Rev 2.3: April 2024 www.aosmd.com Page 1 of 6 AOT125A60L/AOTF125A60L/AOB125A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions
AOT125A60L/AOTF125A60L/AOB125A60L 600V, a MOS5 TM N-Channel Power Transistor.
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