AOB125A60L Alpha & Omega Semiconductors N-Channel Power Transistor

Alpha & Omega Semiconductors
Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology TO-220 TO-220F Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-263 D2PAK D ...
Features C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=20A,Tj=25°C VGS ID IDM IAR EAR EAS dv/dt dv/dt di/dt Power Dissipation B TC=25°C Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8"...

Datasheet PDF File AOB125A60L Datasheet 486.09KB

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