Datasheet Details
| Part number | AOB1404L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 365.55 KB |
| Description | 40V N-Channel MOSFET |
| Download | AOB1404L Download (PDF) |
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| Part number | AOB1404L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 365.55 KB |
| Description | 40V N-Channel MOSFET |
| Download | AOB1404L Download (PDF) |
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Product Summary The AOT1404L/AOB1404L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control.
With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 40V 220A < 4.2mW Top View D TO220 Bottom View D Top View TO-263 D2PAK Bottom View D D S GD G SD S G G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 220 157 500 15 11 140 980 417 208 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 12 48 Maximum Junction-to-Case Steady-State RqJC 0.3 Max 15 60 0.36 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1.1: January 2024 www.aosmd.com Page 1 of 6 AOT1404L/AOB1404L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.5 3.1 3.7 V ID(ON) On state drain current VGS=10V, VDS=5V 500 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TO220 VGS=1
AOT1404L/AOB1404L 40V N-Channel Rugged Planar MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOB1404L | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOB14N50 | 14A N-Channel MOSFET |
| AOB10B60D | 10A Alpha IGBT |
| AOB10B65M1 | 10A Alpha IGBT |
| AOB10N60 | 10A N-Channel MOSFET |
| AOB10T60P | N-Channel MOSFET |
| AOB1100L | 100V N-Channel Rugged Planar MOSFET |
| AOB11C60 | 11A N-Channel MOSFET |
| AOB11N60 | 11A N-Channel MOSFET |
| AOB11S60 | Power Transistor |
| AOB11S60L | Power Transistor |