Datasheet Details
| Part number | AOB15B65M1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 556.47 KB |
| Description | 650V 15A IGBT |
| Datasheet | AOB15B65M1-AlphaOmegaSemiconductors.pdf |
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Overview: AOT15B65M1/AOB15B65M1 650V, 15A Alpha IGBT TM With soft and fast recovery anti-parallel diode.
| Part number | AOB15B65M1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 556.47 KB |
| Description | 650V 15A IGBT |
| Datasheet | AOB15B65M1-AlphaOmegaSemiconductors.pdf |
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|
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• Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor Drives • Sewing Machines • Home Appliances • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-220 TO-263 D2PAK C Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) 650V 15A 1.7V C E C G AOT15B65M1 E G AOB15B65M1 G E Orderable Part Number Package Type Form Minimum Order Quantity AOT15B65M1 TO220 Tube AOB15B65M1 TO263 Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT15B65M1/AOB15B65M1 1000 800 Units Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 30 A 15 Pulsed Collector Current, Limited by TJmax I CM 45 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 45 A Continuous Diode Forward Current TC=25°C TC=100°C IF 30 A 15 Diode Pulsed Current, Limited by TJmax I FM 45 A Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤175°C t SC 5 µs Power Dissipation TC=25°C TC=100°C PD 214 107 W Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics 300 °C Parameter Symbol AOT15B65M1/AOB15B65M1 Units Maximum Junction-to-Ambient R θ JA 65 Maximum IGBT Junction-to-Case R θ JC 0.7 Maximum Diode Junction-to-Case R θ JC 1.9 1) Allowed number of short circuits: <1000;
time between short circuits: >1s.
°C/W °C/W °C/W Rev.2.0: April 2015 www.aosmd.com Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Para
| Part Number | Description |
|---|---|
| AOB15B65MQ1 | 650V 15A IGBT |
| AOB15B60D | 15A Alpha IGBT |
| AOB15S60 | Power Transistor |
| AOB15S60L | Power Transistor |
| AOB15S65 | Power Transistor |
| AOB15S65L | Power Transistor |
| AOB10B60D | 10A Alpha IGBT |
| AOB10B65M1 | 10A Alpha IGBT |
| AOB10N60 | 10A N-Channel MOSFET |
| AOB10T60P | N-Channel MOSFET |