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Alpha & Omega Semiconductors

AOB2904 Datasheet Preview

AOB2904 Datasheet

N-Channel MOSFET

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AOT2904/AOB2904
100V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• Optimized fast-switching applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100V
120A
< 4.4mW
< 5.5mW
< 4.2mW*
< 5.2mW*
Applications
• Industrial
• BMS battery protection
• Synchronous Rectifiers in DC/DC and AC/DC
Converters
100% UIS Tested
100% Rg Tested
TO-263
TO220
D2PAK
Top View
Bottom View
Top View
Bottom View
D
D
D
D
D
G DS
AOT2904
S DG
Orderable Part Number
AOT2904
AOB2904
Package Type
TO-220
TO-263
S
G
GG
S
S
AOB2904
Form
Tube
Tape & Reel
Minimum Order Quantity
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
VDS Spike I
10μs
TC=25°C
Power Dissipation B TC=100°C
VGS
ID
IDM
IDSM
IAS
EAS
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
120
120
425
29
23
77
296
120
326
163
8.3
5.3
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
Maximum Junction-to-Case
Steady-State
* Surface mount package TO263(AOB2904)
Symbol
RqJA
RqJC
Typ
12
50
0.36
Max
15
60
0.46
Units
°C/W
°C/W
°C/W
Rev.2.0: August 2020
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOB2904 Datasheet Preview

AOB2904 Datasheet

N-Channel MOSFET

No Preview Available !

AOT2904/AOB2904
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
100
IDSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250mA
2.3
VGS=10V, ID=20A
TO-220
TJ=125°C
RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A
TO-220
VGS=10V, ID=20A
TO-263
VGS=6V, ID=20A
TO-263
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current G
V
1
μA
5
±100 nA
2.75 3.3
V
3.6
4.4
mΩ
6.3
7.7
4.1
5.5
3.4
4.2 mΩ
3.9
5.2
90
S
0.68
1
V
120
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
7085
pF
605
pF
32
pF
0.7
1.5
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5W,
tD(off)
Turn-Off DelayTime
RGEN=3W
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms
Qrr
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
93
135 nC
23
nC
16
nC
21
ns
22
ns
58
ns
20
ns
49
ns
460
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. L=100uH, Fsw=1Hz, Tj≤150C by repetitive UIS.
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale
Rev.2.0: August 2020
www.aosmd.com
Page 2 of 6



Part Number AOB2904
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 3 Pages
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AOB2904 Datasheet PDF





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