Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
IS
ISM
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=150°C
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V,ID=250µA
Static Drain-Source On-Resistance
VGS=10V, ID=14.5A, TJ=25°C
VGS=10V, ID=14.5A, TJ=150°C
Diode Forward Voltage
IS=14.5A,VGS=0V, TJ=25°C
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Min Typ Max Units
500
-
-
550 600
-
V
-
-
1
-
10
-
µA
-
- ±100 nΑ
2.6 3.3 3.9
V
-
0.13 0.15 Ω
-
0.34 0.4
Ω
- 0.85 -
V
-
-
29
A
-
-
120 A
- 1312 -
pF
-
88
-
pF
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 400V, f=1MHz
-
78
-
pF
-
227
-
pF
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
-
2.5
-
pF
-
4.8
-
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=400V, ID=14.5A
- 26.6 -
nC
-
6.2
-
nC
Qgd
Gate Drain Charge
-
9.2
-
nC
tD(on)
Turn-On DelayTime
-
28
-
ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=14.5A,
RG=25Ω
-
39
-
ns
-
103
-
ns
tf
Turn-Off Fall Time
-
40
-
ns
trr
Body Diode Reverse Recovery Time IF=14.5A,dI/dt=100A/µs,VDS=400V
-
387
-
ns
Irm
Peak Reverse Recovery Current
IF=14.5A,dI/dt=100A/µs,VDS=400V
-
29.6
-
A
Qrr
Body Diode Reverse Recovery Charge IF=14.5A,dI/dt=100A/µs,VDS=400V
-
7.3
-
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1.0: August 2017
www.aosmd.com
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