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Alpha & Omega Semiconductors

AOB29S50L Datasheet Preview

AOB29S50L Datasheet

Power Transistor

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AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50
500V 29A α MOS TM Power Transistor
General Description
Product Summary
The AOT29S50L & AOB29S50L & AOTF29S50L &
AOTF29S50 have been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver high
levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with guaranteed
avalanche capability these parts can be adopted quickly into
new and existing offline power supply designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
600V
120A
0.15
26.6nC
6.3µJ
Top View
TO-220
TO-220F
TO-263
D2PAK
D
D
D
AOT29S50L
S
D
G
AOTF29S50(L)
S
GD
G
AOB29S50L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT29S50L/AOB29S50L AOTF29S50
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
±30
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
29
29*
18
18*
120
7.5
110
608
TC=25°C
Power Dissipation B Derate above 25oC
PD
357
50
2.9
0.4
MOSFET dv/dt ruggedness
100
Peak diode recovery dv/dt H
dv/dt
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
300
Thermal Characteristics
Parameter
Symbol
AOT29S50L/AOB29S50L AOTF29S50
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
65
65
RθCS
0.5
--
Maximum Junction-to-Case
RθJC
0.35
2.5
* Drain current limited by maximum junction temperature.
G
S
AOTF29S50L
29*
18*
37.9
0.3
AOTF29S50L
65
--
3.3
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev1.0: August 2017
www.aosmd.com
Page 1 of 7




Alpha & Omega Semiconductors

AOB29S50L Datasheet Preview

AOB29S50L Datasheet

Power Transistor

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
IS
ISM
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=150°C
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V,ID=250µA
Static Drain-Source On-Resistance
VGS=10V, ID=14.5A, TJ=25°C
VGS=10V, ID=14.5A, TJ=150°C
Diode Forward Voltage
IS=14.5A,VGS=0V, TJ=25°C
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Min Typ Max Units
500
-
-
550 600
-
V
-
-
1
-
10
-
µA
-
- ±100 nΑ
2.6 3.3 3.9
V
-
0.13 0.15
-
0.34 0.4
- 0.85 -
V
-
-
29
A
-
-
120 A
- 1312 -
pF
-
88
-
pF
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 400V, f=1MHz
-
78
-
pF
-
227
-
pF
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
-
2.5
-
pF
-
4.8
-
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=400V, ID=14.5A
- 26.6 -
nC
-
6.2
-
nC
Qgd
Gate Drain Charge
-
9.2
-
nC
tD(on)
Turn-On DelayTime
-
28
-
ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=14.5A,
RG=25
-
39
-
ns
-
103
-
ns
tf
Turn-Off Fall Time
-
40
-
ns
trr
Body Diode Reverse Recovery Time IF=14.5A,dI/dt=100A/µs,VDS=400V
-
387
-
ns
Irm
Peak Reverse Recovery Current
IF=14.5A,dI/dt=100A/µs,VDS=400V
-
29.6
-
A
Qrr
Body Diode Reverse Recovery Charge IF=14.5A,dI/dt=100A/µs,VDS=400V
-
7.3
-
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.5A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1.0: August 2017
www.aosmd.com
Page 2 of 7


Part Number AOB29S50L
Description Power Transistor
Maker Alpha & Omega Semiconductors
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