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Alpha & Omega Semiconductors

AOD2922 Datasheet Preview

AOD2922 Datasheet

100V N-Channel AlphaMOS

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AOD2922
100V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS MV) technology
• Very Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100V
7A
< 140m
< 176m
Application
• Synchronus Rectification in DC/DC and AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
Top View
D
TO-252
DPAK
Bottom View
D
D
SG
GS
Orderable Part Number
AOD2922
Package Type
TO-252
G
Form
Tape & Reel
S
Minimum Order Quantity
2500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
VGS
ID
IDM
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10us
TC=25°C
TC=100°C
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
7
5
10
3.5
3
3
0.5
120
17
8.5
5.0
3.2
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Symbol
t 10s
Steady-State
RθJA
Steady-State
RθJC
Typ
20
40
7.3
Max
25
50
8.8
Units
°C/W
°C/W
°C/W
Rev.1.0: October 2013
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOD2922 Datasheet Preview

AOD2922 Datasheet

100V N-Channel AlphaMOS

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=5A
VGS=4.5V, ID=3A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=10,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=5A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs
Min
100
1.7
5
Typ
2.2
117
224
140
8.5
0.8
250
19
2.5
10.5
3.8
1.8
0.8
0.8
5
3
19
5
16
52
Max Units
1
5
±100
2.7
140
270
176
1.1
7
V
µA
nA
V
m
m
S
V
A
310 pF
30 pF
8 pF
16
10 nC
6 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2013
www.aosmd.com
Page 2 of 6


Part Number AOD2922
Description 100V N-Channel AlphaMOS
Maker Alpha & Omega Semiconductors
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